Determination of thermal cure kinetics of thin films of photocatalysed dicyanate ester by FTIR emission spectroscopy

2000 ◽  
Vol 49 (11) ◽  
pp. 1505-1512 ◽  
Author(s):  
Heping Liu ◽  
G?A George
2011 ◽  
Vol 107 (3) ◽  
pp. 989-998 ◽  
Author(s):  
Arunjunai Raj Mahendran ◽  
Günter Wuzella ◽  
Andreas Kandelbauer ◽  
Nicolai Aust

1999 ◽  
Vol 11 (1) ◽  
pp. 27-39 ◽  
Author(s):  
D G Rogers ◽  
E Marand ◽  
D J T Hill ◽  
G A George

2013 ◽  
Vol 32 (1) ◽  
pp. 337 ◽  
Author(s):  
Gordana Bogoeva-Gaceva ◽  
Aleksandra Buzarovska

AbstractIn this study we report the results of a rapid method applied for evaluation of the data obtained by DSC measurements of cure reaction of thermosetting resins. The method is based on Borchardt and Daniels kinetic model and enables determination of basic parameters important for product and process development, but also for optimization of cure cycles for variety of thermosets.


1986 ◽  
Vol 68 ◽  
Author(s):  
Chang Soo Park ◽  
Jeffrey R. Bodart ◽  
He-Xiang Han ◽  
Bernard J. Feldman

AbstractThe emission spectra of various hydrocarbon plasmas used in the growth of amorphous hydrogenated carbon (α-C:H) thin films have been measured.The presence of CH, H, H2, and C2 species in the plasma have been observed.The chemical composition of the α-C:H films was determined by combustion analysis and shows roughly equal atomic concentrations of H and C and a surprising large concentration of 0.The plasma emission spectra and chemical composition results can be partially understood in terms of relative bond strengths of the different molecules involved, and these results give some insights into the growth kinetics of α-C:H thin films.


RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102567-102573 ◽  
Author(s):  
Seo Gyun Kim ◽  
Soon Sik Lee ◽  
Eunsu Lee ◽  
Jinhwan Yoon ◽  
Heon Sang Lee

By measurement of the electrical conductivities of GO coated PET films during the reduction reaction, we determined activation energy.


Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.


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